Invention Grant
- Patent Title: Vertical transport FETs having a gradient threshold voltage
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Application No.: US16215027Application Date: 2018-12-10
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Publication No.: US10600883B2Publication Date: 2020-03-24
- Inventor: Choonghyun Lee , Takashi Ando , Jingyun Zhang , Pouya Hashemi , Alexander Reznicek
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Scully, Scott, Murphy & Presser, P.C.
- Agent L. Jeffrey Kelly, Esq.
- Main IPC: H01L29/49
- IPC: H01L29/49 ; H01L29/78 ; H01L29/08 ; H01L27/092 ; H01L21/8238 ; H01L21/28 ; H01L21/3215 ; H01L23/535 ; H01L29/66 ; H01L21/8234 ; H01L21/84 ; H01L27/12 ; H01L27/088 ; H01L29/417
Abstract:
Vertical transport field effect transistors (FETs) having improved device performance are provided. Notably, vertical transport FETs having a gradient threshold voltage are provided. The gradient threshold voltage is provided by introducing a threshold voltage modifying dopant into a physically exposed portion of a metal gate layer composed of an n-type workfunction TiN. The threshold voltage modifying dopant changes the threshold voltage of the original metal gate layer.
Public/Granted literature
- US20190172922A1 VERTICAL TRANSPORT FETS HAVING A GRADIENT THRESHOLD VOLTAGE Public/Granted day:2019-06-06
Information query
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