Invention Grant
- Patent Title: Bipolar junction transistor and method of fabricating the same
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Application No.: US16027002Application Date: 2018-07-03
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Publication No.: US10600894B2Publication Date: 2020-03-24
- Inventor: Sinan Goktepeli , Plamen Vassilev Kolev , Peter Graeme Clarke
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Main IPC: H01L29/737
- IPC: H01L29/737 ; H01L29/417 ; H01L29/423 ; H01L29/06 ; H01L29/10 ; H01L29/08 ; H01L29/45 ; H01L29/66 ; H01L21/762 ; H01L21/3105 ; H01L21/306 ; H01L21/02
Abstract:
A Bipolar Junction Transistor (BJT) comprises an emitter, a collector, and a base between the emitter and the collector. The BJT also comprises an emitter contact on a first side of the BJT, a base contact on the first side of the BJT, and a collector contact on a second side of the BJT. The BJT further comprises a Deep Trench Isolation (DTI) region extending from the first side of the BJT to the second side of the BJT.
Public/Granted literature
- US20200013884A1 BIPOLAR JUNCTION TRANSISTOR AND METHOD OF FABRICATING THE SAME Public/Granted day:2020-01-09
Information query
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