The invention provides a power device, which includes: an operation layer, including a top surface, a body region and a drift region, the body region and the drift region being connected in a lateral direction, to form a PN junction along a channel width direction between the body region and the drift region; a gate, formed on the top surface, and the PN junction is located under the gate; a source, formed in a portion of the operation layer between the body region and the top surface; a drain, formed in another portion of the operation layer between the drift region and the top surface; a first conduction portion, formed on the top surface for electrically connecting the source; a conduction layer, formed on the first conduction portion and electrically connected to the source via the first conduction portion; and a second conduction portion, formed on the top surface and between the conduction layer and the drift region in a thickness direction, for electrically connecting the drift region and the conduction layer, wherein a Schottky diode is formed by the second conduction portion and the drift region.