Invention Grant
- Patent Title: Semiconductor device and method for producing the same
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Application No.: US15700337Application Date: 2017-09-11
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Publication No.: US10600896B2Publication Date: 2020-03-24
- Inventor: Takamitsu Matsuo , Hitoshi Matsuura , Yasuyuki Saito , Yoshinori Hoshino
- Applicant: Renesas Electronics Corporation
- Applicant Address: JP Tokyo
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Tokyo
- Agency: SGPatents PLLC
- Priority: JP2016-177746 20160912
- Main IPC: H01L29/739
- IPC: H01L29/739 ; H01L29/10 ; H01L29/40 ; H01L29/66 ; H01L29/06 ; H01L29/423
Abstract:
In an active region, a gate electrode is disposed in a trench. Spaced apart from the gate electrode, an emitter electrode is disposed in the trench. A source diffusion layer and a base diffusion layer are formed in the active region. The base diffusion layer has a base bottom portion inclined in such a manner that a portion of the base bottom portion adjacent to the emitter electrode is positionally deeper than a portion of the base bottom portion adjacent to the gate electrode. A contact portion has a contact bottom portion inclined in such a manner that a portion of the contact bottom portion in contact with the emitter electrode is positionally deeper than a portion of the contact bottom portion in contact with the base diffusion layer.
Public/Granted literature
- US20180076308A1 SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING THE SAME Public/Granted day:2018-03-15
Information query
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