Invention Grant
- Patent Title: Self-repairing field effect transisitor
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Application No.: US12030719Application Date: 2008-02-13
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Publication No.: US10600902B2Publication Date: 2020-03-24
- Inventor: Robert Xu
- Applicant: Robert Xu
- Applicant Address: US CA San Jose
- Assignee: Vishay Siliconix, LLC
- Current Assignee: Vishay Siliconix, LLC
- Current Assignee Address: US CA San Jose
- Main IPC: H01L27/06
- IPC: H01L27/06 ; H01L29/78 ; H01L23/525 ; H01L27/088 ; H01L29/417 ; H01L29/66 ; H01L29/808
Abstract:
A self repairing field effect transistor (FET) device, in accordance with one embodiment, includes a plurality of FET cells each having a fuse link. The fuse links are adapted to blow during a high current event in a corresponding cell.
Public/Granted literature
- US20090200578A1 SELF-REPAIRING FIELD EFFECT TRANSISITOR Public/Granted day:2009-08-13
Information query
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