Invention Grant
- Patent Title: Semiconductor device
-
Application No.: US16121220Application Date: 2018-09-04
-
Publication No.: US10600920B2Publication Date: 2020-03-24
- Inventor: Vinay Suresh , Po-An Chen
- Applicant: Nuvoton Technology Corporation
- Applicant Address: TW Hsinchu Science Park
- Assignee: NUVOTON TECHNOLOGY CORPORATION
- Current Assignee: NUVOTON TECHNOLOGY CORPORATION
- Current Assignee Address: TW Hsinchu Science Park
- Agency: Muncy, Geissler, Olds & Lowe, P.C.
- Priority: TW107115562A 20180508
- Main IPC: H01L29/808
- IPC: H01L29/808 ; H01L29/417 ; H01L29/08 ; H01L29/06
Abstract:
A semiconductor device includes a semiconductor substrate having a first conductivity type; a deep well region disposed on the semiconductor substrate, and having a second conductivity type opposite to the first conductivity type; a first well region and a second well region disposed in the deep well region and having the first conductivity type, wherein the first well region and the second well region are separated by a portion of the deep well region, and the first well region is electrically connected to the second well region; and a first doped region and a second doped region disposed in the deep well region and having the second conductivity type, wherein the first well region and the second well region are located between the first doped region and the second doped region.
Information query
IPC分类:
