Invention Grant
- Patent Title: Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device
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Application No.: US15152522Application Date: 2016-05-11
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Publication No.: US10600921B2Publication Date: 2020-03-24
- Inventor: Naoyuki Ohse , Fumikazu Imai , Tsunehiro Nakajima , Kenji Fukuda , Shinsuke Harada , Mitsuo Okamoto
- Applicant: FUJI ELECTRIC CO., LTD.
- Applicant Address: JP Kawasaki-shi, Kanagawa
- Assignee: FUJI ELECTRIC CO., LTD.
- Current Assignee: FUJI ELECTRIC CO., LTD.
- Current Assignee Address: JP Kawasaki-shi, Kanagawa
- Agency: Rabin & Berdo, P.C.
- Priority: JP2013-242367 20131122
- Main IPC: H01L29/872
- IPC: H01L29/872 ; H01L29/16 ; H01L21/04 ; H01L29/66 ; H01L29/47 ; H01L29/167

Abstract:
In forming an ohmic electrode on a back surface of an n-type SiC substrate, an n+-type semiconductor region is formed in a surface layer of the back surface of an n-type epitaxial substrate by ion implantation. In this ion implantation, the impurity concentration of the n+-type semiconductor region is a predetermined range and preferably a predetermined value or less, and an n-type impurity is implanted by acceleration energy of a predetermined range such that the n+-type semiconductor region has a predetermined thickness or less. Thereafter, a nickel layer and a titanium layer are sequentially formed on the surface of the n+-type semiconductor region, the nickel layer is heat treated to form a silicide, and the ohmic electrode formed from nickel silicide is formed. In this manner, a back surface electrode that has favorable properties can be formed while peeling of the back surface electrode can be suppressed.
Public/Granted literature
- US20160254393A1 SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE Public/Granted day:2016-09-01
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