According to an embodiment, a semiconductor storage device includes a substrate. A stack is provided above the substrate, and includes a resistance change element and a metal layer provided above the resistance change element. A first insulating layer is provided on a side surface of the stack. A second insulating layer is provided on the first insulating layer. And an electrode is provided on the metal layer and on the first insulating layer so as to extend along a stacking direction in the second insulating layer. A lower surface of the electrode as viewed in the direction has a diameter greater than a diameter of an upper surface of the stack as viewed in the direction. A lowermost portion of the electrode is at a same level as an uppermost portion of the metal layer as viewed in the direction.