Invention Grant
- Patent Title: Quantum dot display device and manufacture method thereof
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Application No.: US15571368Application Date: 2017-05-18
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Publication No.: US10600979B2Publication Date: 2020-03-24
- Inventor: Huafei Xie
- Applicant: Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd.
- Applicant Address: CN Shenzhen, GD
- Assignee: Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd.
- Current Assignee: Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd.
- Current Assignee Address: CN Shenzhen, GD
- Agent Mark M. Friedman
- Priority: CN201710244634 20170414
- International Application: PCT/CN2017/084851 WO 20170518
- International Announcement: WO2018/188155 WO 20181018
- Main IPC: H01L51/50
- IPC: H01L51/50 ; H01L51/00 ; H01L51/56 ; H01L51/52 ; B82Y30/00 ; B82Y20/00

Abstract:
Disclosed are a quantum dot display device and a manufacture method thereof. The quantum dot display device includes a flexible substrate, a first electrode layer, a second electrode layer, and a component combination layer. The material of the first electrode layer is a fullerene-graphene material or a carbon nanotube-graphene material. The material of the second electrode layer is the carbon nanotube-graphene material or the fullerene-graphene material. Or else, both of the material of the first electrode layer and the material of the second electrode layer are non-metal doped graphene. The device can reduce a use of metal material and thus avoid damage to the environment.
Public/Granted literature
- US20180366673A1 QUANTUM DOT DISPLAY DEVICE AND MANUFACTURE METHOD THEREOF Public/Granted day:2018-12-20
Information query
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