Invention Grant
- Patent Title: Resonant cavity strained group III-V photodetector and LED on silicon substrate and method to fabricate same
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Application No.: US16239657Application Date: 2019-01-04
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Publication No.: US10601199B2Publication Date: 2020-03-24
- Inventor: Cheng-Wei Cheng , Effendi Leobandung , Ning Li , Devendra K. Sadana , Kuen-Ting Shiu
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Harrington & Smith
- Main IPC: H01L33/10
- IPC: H01L33/10 ; H01S5/183 ; H01L33/12 ; H01L33/30 ; H01L31/0304 ; H01L31/0232 ; H01L31/105 ; H01L33/00 ; H01S5/343 ; H01S5/187 ; H01L31/18 ; H01S5/02 ; H01L33/02 ; H01S5/026
Abstract:
A structure includes an optoelectronic device having a Group IV substrate (e.g., Si); a buffer layer (e.g. SiGe) disposed on the substrate and a first distributed Bragg reflector (DBR) disposed on the buffer layer. The first DBR contains alternating layers of doped Group IV materials (e.g., alternating layers of SiyGe(1-y), where 0.8
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