Invention Grant
- Patent Title: Stacked symmetric T-coil with intrinsic bridge capacitance
-
Application No.: US15694595Application Date: 2017-09-01
-
Publication No.: US10601222B2Publication Date: 2020-03-24
- Inventor: Siqi Fan
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agency: Arent Fox, LLP and Qualcomm, Incorporated
- Main IPC: H02H9/04
- IPC: H02H9/04 ; H01F17/00 ; H01F27/28 ; H01F27/29 ; H01L27/02 ; H01L49/02

Abstract:
A T-coil IC includes a first inductor on an Mx layer. The first inductor has n turns, where n is at least 1⅞ turns. The T-coil IC further includes a second inductor on an Mx−1 layer. The second inductor has n turns. The first inductor and the second inductor are connected together at a node. The first inductor on the Mx layer and the second inductor on the Mx−1 layer are mirror symmetric to each other. The T-coil IC further includes a center tap on an Mx−2−y layer, where y≥0. The center tap is connected to the first inductor and the second inductor by a via stack at the node. In one configuration, n is 1⅞+0.5z turns, where z≥0. An effective bridge capacitance of the T-coil IC may be approximately 25 fF.
Public/Granted literature
- US20190074686A1 STACKED SYMMETRIC T-COIL WITH INTRINSIC BRIDGE CAPACITANCE Public/Granted day:2019-03-07
Information query