Invention Grant
- Patent Title: Semiconductor device and method for manufacturing the same
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Application No.: US16450115Application Date: 2019-06-24
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Publication No.: US10601307B1Publication Date: 2020-03-24
- Inventor: Yasutaka Shimizu , Yuji Miyazaki , Kazuya Okada
- Applicant: Mitsubishi Electric Corporation
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Studebaker & Brackett PC
- Priority: JP2018-170202 20180912
- Main IPC: H02M1/00
- IPC: H02M1/00 ; H02M1/34 ; H01L27/06 ; H01L25/07 ; H01L25/18 ; H02M7/48 ; H01L23/64 ; H01L23/00 ; H01L29/94

Abstract:
The object is to provide a technology for enabling detection of the voltage resistance in an assembled snubber substrate. A semiconductor device includes: a snubber substrate fixed to a base while being spaced from a p electrode and an n electrode; a snubber circuit disposed on the snubber substrate and electrically connected to the p electrode and the n electrode; and a semiconductor element electrically connected to the snubber circuit. The base includes an insulating component insulating the p electrode, the n electrode, and the snubber substrate from one another.
Public/Granted literature
- US20200083801A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2020-03-12
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