Invention Grant
- Patent Title: Integrated high-side driver for P-N bimodal power device
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Application No.: US15809291Application Date: 2017-11-10
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Publication No.: US10601422B2Publication Date: 2020-03-24
- Inventor: Yongxi Zhang , Sameer P. Pendharkar , Philip L. Hower , Salvatore Giombanco , Filippo Marino , Seetharaman Sridhar
- Applicant: Texas Instruments Incorporated
- Applicant Address: US TX Dallas
- Assignee: Texas Instruments Incorporated
- Current Assignee: Texas Instruments Incorporated
- Current Assignee Address: US TX Dallas
- Agent Lawrence J. Bassuk; Charles A. Brill; Frank D. Cimino
- Main IPC: H03K17/687
- IPC: H03K17/687 ; H01L29/06 ; H03K19/0185 ; H01L29/78 ; H01L29/10 ; H03K17/12 ; H01L27/092 ; H01L21/8238

Abstract:
An integrated circuit chip includes a bimodal power N-P-Laterally Diffused Metal Oxide Semiconductor (LDMOS) device having an N-gate coupled to receive an input signal and a level shifter coupled to receive the input signal and to provide a control signal to a P-gate driver of the N-P-LDMOS device. A method of operating an N-P-LDMOS power device is also disclosed.
Public/Granted literature
- US20180097517A1 INTEGRATED HIGH-SIDE DRIVER FOR P-N BIMODAL POWER DEVICE Public/Granted day:2018-04-05
Information query
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