Invention Grant
- Patent Title: Method for patterning a substrate using extreme ultraviolet lithography
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Application No.: US15271306Application Date: 2016-09-21
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Publication No.: US10606176B2Publication Date: 2020-03-31
- Inventor: Anton J. deVilliers
- Applicant: Tokyo Electron Limited
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Main IPC: G03F7/20
- IPC: G03F7/20 ; G03F7/16 ; H01L21/027 ; H01L21/308 ; G03F7/00 ; G03F7/26 ; G03F7/40 ; H01L21/306 ; H01L21/3065

Abstract:
Techniques disclosed herein provide a method for continued patterning of substrates having sub-resolution features. Techniques include using novel deposition and removal techniques. This results in a substrate with inter-digitated photoresist in which photoresist is positioned between structures on a given substrate. Combined with using extreme ultraviolet lithographic exposure, patterning techniques herein can make desired cuts and blocks at specified locations on the substrate.
Public/Granted literature
- US20170090290A1 Method for Patterning a Substrate Using Extreme Ultraviolet Lithography Public/Granted day:2017-03-30
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