Invention Grant
- Patent Title: Semiconductor memory device capable of performing a hammer refresh operation while performing a normal refresh operation and memory system having the same
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Application No.: US16059791Application Date: 2018-08-09
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Publication No.: US10607683B2Publication Date: 2020-03-31
- Inventor: Hoon Shin , Do Yeon Kim , Ho Young Song
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: Sughrue Mion, PLLC
- Priority: KR10-2018-0047741 20180425
- Main IPC: G11C11/406
- IPC: G11C11/406 ; G11C11/4091

Abstract:
A semiconductor memory device and a memory system having the same are provided. The semiconductor memory device includes a memory cell array including plural memory cell array blocks, and a refresh controller configured to control the memory cell array blocks to perform a normal refresh operation and a hammer refresh operation. The refresh controller controls one or more third memory cell array blocks excluding a first memory cell array block and one or more second memory cell array blocks adjacent to the first memory cell array block to perform the hammer refresh operation while the normal refresh operation is performed on the first memory cell array block among the memory cell array blocks.
Public/Granted literature
- US20190333573A1 SEMICONDUCTOR MEMORY DEVICE AND MEMORY SYSTEM HAVING THE SAME Public/Granted day:2019-10-31
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