CMP slurry composition for polishing copper line and polishing method using same

Invention Grant

US10607853B2 CMP slurry composition for polishing copper line and polishing method using same 有权

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Patent Title: CMP slurry composition for polishing copper line and polishing method using same
Application No.: US15528972

Application Date: 2015-10-12
Publication No.: US10607853B2

Publication Date: 2020-03-31
Inventor: Jong Il Noh , Dong Hun Kang , Jeong Hwan Jeong , Young Nam Choi
Applicant: SAMSUNG SDI CO., LTD.
Applicant Address: KR Yongin-Si, Gyeonggi-do
Assignee: Samsung SDI Co., Ltd.
Current Assignee: Samsung SDI Co., Ltd.
Current Assignee Address: KR Yongin-Si, Gyeonggi-do
Agency: Lee IP Law, PC
Priority: KR10-2015-0058070 20150424
International Application: PCT/KR2015/010731 WO 20151012
International Announcement: WO2016/171350 WO 20161027
Main IPC: H01L21/321
IPC: H01L21/321 ; C09K3/14 ; H01L21/304 ; C09G1/04 ; C09G1/02 ; H01L21/306

CMP slurry composition for polishing copper line and polishing method using same

Abstract:

The present invention relates to a CMP slurry composition for polishing a copper line, the CMP slurry composition comprising a colloidal silica, an oxidizing agent, a complexing agent, a corrosion inhibitor, a pH regulator, and ultrapure water. The colloidal silica has a specific surface area (BET) of 72.9 to 88.5 m2/g, and 0.1 to 2 wt % of the colloidal silica is included in the CMP slurry composition. The CMP slurry composition has an excellent copper line polishing rate, has a low number of defects and minimizes scratches after polishing, and can minimize dishing.

Public/Granted literature

US20170271172A1 CMP SLURRY COMPOSITION FOR POLISHING COPPER LINE AND POLISHING METHOD USING SAME Public/Granted day:2017-09-21

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18	...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/30	....用H01L21/20至H01L21/26各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/28）
H01L21/31	.....在半导体材料上形成绝缘层的，例如用于掩膜的或应用光刻技术的（密封层入H01L21/56）；以及这些层的后处理；这些层的材料的选择
H01L21/3205	......非绝缘层的沉积，例如绝缘层上的导电层或电阻层；这些层的后处理（电极的制造入H01L21/28）
H01L21/321	.......后处理