- Patent Title: Reduction of cross talk in WLCSP's through laser drilled technique
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Application No.: US16525702Application Date: 2019-07-30
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Publication No.: US10607912B2Publication Date: 2020-03-31
- Inventor: Habeeb Mohiuddin Mohammed , Rajesh Subraya Aiyandra
- Applicant: Dialog Semiconductor (UK) Limited
- Applicant Address: GB London
- Assignee: Dialog Semiconductor (UK) Limited
- Current Assignee: Dialog Semiconductor (UK) Limited
- Current Assignee Address: GB London
- Agency: Saile Ackerman LLC
- Agent Stephen B. Ackerman; Rosemary L. S. Pike
- Main IPC: H01L23/31
- IPC: H01L23/31 ; H01L21/56 ; H01L23/498 ; H01L23/00 ; H01L29/06 ; B81C1/00

Abstract:
A wafer level chip scale package is described. The wafer level chip scale package comprises a plurality of redistribution layer (RDL) traces connected to a silicon wafer through openings through a first polymer layer to metal pads on a top surface of the silicon wafer. A plurality of underbump metal (UBM) layers each contact one of the plurality of RDL traces through openings in a second polymer layer over the first polymer layer. A plurality of solder bumps lie on each UBM layer. A metal plating layer lies under the first polymer layer and does not contact any of the plurality of RDL traces. At least one separator lies between at least two of the plurality of RDL traces. The separator is a metal fencing between the two neighboring RDL traces or an air gap between the two neighboring RDL traces.
Public/Granted literature
- US20190355641A1 Reduction of Cross Talk in WLCSP's Through Laser Drilled Technique Public/Granted day:2019-11-21
Information query
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