Invention Grant
- Patent Title: High-density triple diamond stripline interconnects
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Application No.: US16116483Application Date: 2018-08-29
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Publication No.: US10607952B2Publication Date: 2020-03-31
- Inventor: Albert Sutono
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Lowenstein Sandler LLP
- Main IPC: H01L23/528
- IPC: H01L23/528 ; H01L23/66 ; H01L23/538 ; H01L25/065 ; H01P3/08 ; H01L23/00

Abstract:
In accordance with embodiments disclosed herein, there is provided a high density triple diamond stripline interconnect. An interconnect includes a first reference layer, a second reference layer disposed below the first reference layer, and a dielectric disposed between the first reference layer and the second reference layer. The interconnect further includes a first pair of conductors including a first conductor and a second conductor that are in a broadside-facing orientation within the dielectric below the first reference layer and above the second reference layer. The interconnect further includes a second pair of conductors including a third conductor and a fourth conductor that are in an edge-facing orientation within the dielectric below the first conductor and above the second conductor.
Public/Granted literature
- US20190043816A1 HIGH-DENSITY TRIPLE DIAMOND STRIPLINE INTERCONNECTS Public/Granted day:2019-02-07
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