Invention Grant
- Patent Title: Heterogeneous fan-out structures for memory devices
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Application No.: US15636078Application Date: 2017-06-28
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Publication No.: US10607955B2Publication Date: 2020-03-31
- Inventor: Chin-Tien Chiu , Chih-Chin Liao , Weiting Jiang , Hem Takiar
- Applicant: SanDisk Semiconductor (Shanghai) Co. Ltd.
- Applicant Address: CN Shanghai
- Assignee: SanDisk Semiconductor (Shanghai) Co. Ltd.
- Current Assignee: SanDisk Semiconductor (Shanghai) Co. Ltd.
- Current Assignee Address: CN Shanghai
- Agency: Brinks Gilson & Lione
- Priority: CN201710468484 20170620
- Main IPC: H01L25/065
- IPC: H01L25/065 ; H01L23/00 ; H01L25/00 ; H01L23/538 ; H01L25/18 ; G11C5/04

Abstract:
A device may include a fan-out structure that has a plurality of integrated circuits. The integrated circuits may be of different types, such as by being configured differently or configured to perform different functions. The fan-out structure may be coupled to another integrated circuit structure, such as a die stack. For example, the fan-out structure may be coupled to a top surface or a bottom surface of the integrated circuit structure, or may otherwise be disposed within a vertical profile defined by the integrated circuit structure. Horizontally-extending and vertically-extending paths may be disposed in between and around the combined fan-out structure and integrated circuit structure to enable the integrated circuits of the two structures to communicate.
Public/Granted literature
- US20180366429A1 HETEROGENEOUS FAN-OUT STRUCTURES FOR MEMORY DEVICES Public/Granted day:2018-12-20
Information query
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