The present disclosure discloses a self-gated RRAM cell and a manufacturing method thereof; which belong to the field of microelectronic technology. The self-gated RRAM cell comprises: a stacked structure containing multiple layers of conductive lower electrodes; a vertical trench formed by etching the stacked structure; a M8XY6 gated layer formed on an inner wall and a bottom of the vertical trench; a resistance transition layer formed on a surface of the M8XY6, gated layer; and a conductive upper electrode formed on a surface of the resistance transition layer, the vertical trench being filled with the conductive upper electrode. The present disclosure is implemented on a basis of using the self-gated RRAM as a memory cell. It may not depend on a gated transistor and a diode, but relies on a non-linear variation characteristic of resistance of its own varied with voltage to achieve a self-gated function, which has a simple structure, easy integration, high density and low cost, capable of suppressing a reading crosstalk phenomenon in a cross array structure; and is also adapted for a planar stacked cross array structure and a vertical cross array structure, achieving 3D storage with a high density.