Invention Grant
- Patent Title: Method of manufacturing semiconductor laser element
-
Application No.: US16013987Application Date: 2018-06-21
-
Publication No.: US10608407B2Publication Date: 2020-03-31
- Inventor: Yutaka Ohki , Masafumi Tajima
- Applicant: FURUKAWA ELECTRIC CO., LTD.
- Applicant Address: JP Tokyo
- Assignee: FURUKAWA ELECTRIC CO., LTD.
- Current Assignee: FURUKAWA ELECTRIC CO., LTD.
- Current Assignee Address: JP Tokyo
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2016-162910 20160823
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01S5/028 ; H01S5/16 ; H01S5/343

Abstract:
A method of manufacturing a semiconductor laser element includes: a cleaning process of holding a semiconductor light emission element that emits light from a facet thereof in a plasma sputtering device in which a target is covered with quartz, and cleaning the facet by irradiating the facet with plasma in the plasma sputtering device; and a dielectric film formation process of transporting the cleaned semiconductor light emission element to a deposition device without exposing the semiconductor light emission element to an atmosphere, and forming a dielectric film on the cleaned facet in the deposition device.
Public/Granted literature
- US20180316156A1 METHOD OF MANUFACTURING SEMICONDUCTOR LASER ELEMENT Public/Granted day:2018-11-01
Information query
IPC分类: