Invention Grant
- Patent Title: High-gain low noise figure low noise complementary metal oxide semiconductor amplifier with low current consumption
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Application No.: US16370311Application Date: 2019-03-29
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Publication No.: US10608590B2Publication Date: 2020-03-31
- Inventor: Oleksandr Gorbachov , Lisette L. Zhang
- Applicant: Skyworks Solutions, Inc.
- Applicant Address: US MA Woburn
- Assignee: Skyworks Solutions, Inc.
- Current Assignee: Skyworks Solutions, Inc.
- Current Assignee Address: US MA Woburn
- Agency: Stetina Brunda Garred & Brucker
- Main IPC: H04B1/16
- IPC: H04B1/16 ; H03F1/02 ; H03F1/22 ; H03F1/34 ; H03F3/193 ; H03F1/56 ; H03F3/195 ; H03F3/24 ; H04B1/48

Abstract:
A radio frequency low noise amplifier circuit with a receive signal input, a receive signal output, and a voltage source include a low noise amplifier and a coupled inductor circuit with a primary inductive chain connected to the output of the low noise amplifier and to the voltage source. The coupled inductor circuit further includes a secondary inductive chain with a first inductor electromagnetically coupled to the primary inductive chain, and a second inductor in series with the first inductor and magnetically coupled to the primary inductive chain. The second inductor is connected to a feedback node of the low noise amplifier. There is an output matching network connected to the first inductor of the secondary inductive chain and to the receive signal output.
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