Invention Grant
- Patent Title: Semiconductor device having super junction metal oxide semiconductor structure and fabrication method for the same
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Application No.: US16245681Application Date: 2019-01-11
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Publication No.: US10629722B2Publication Date: 2020-04-21
- Inventor: Toshio Nakajima
- Applicant: ROHM CO., LTD.
- Applicant Address: JP Kyoto
- Assignee: ROHM CO., LTD.
- Current Assignee: ROHM CO., LTD.
- Current Assignee Address: JP Kyoto
- Agent Gregory M. Howison
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@6db9c335
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/06 ; H01L29/10 ; H01L29/32 ; H01L29/66 ; H01L21/265 ; H01L21/263
Abstract:
A semiconductor device includes: a first base layer; a drain layer disposed on the back side surface of the first base layer; a second base layer formed on the surface of the first base layer; a source layer formed on the surface of the second base layer; a gate insulating film disposed on the surface of both the source layer and the second base layer; a gate electrode disposed on the gate insulating film; a column layer formed in the first base layer of the lower part of both the second base layer and the source layer by opposing the drain layer; a drain electrode disposed in the drain layer; and a source electrode disposed on both the source layer and the second base layer, wherein heavy particle irradiation is performed to the column layer to form a trap level locally.
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