Invention Grant
- Patent Title: Physical vapor deposition with isotropic neutral and non-isotropic ion velocity distribution at the wafer surface
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Application No.: US16516111Application Date: 2019-07-18
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Publication No.: US10648074B2Publication Date: 2020-05-12
- Inventor: Daniel J. Hoffman , Karl M. Brown , Ying Rui , John Pipitone
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Fish & Richardson P.C.
- Main IPC: C23C14/34
- IPC: C23C14/34 ; C23C14/35 ; H01J37/32 ; H01J37/34 ; C23C14/50 ; C23C14/54

Abstract:
In a plasma enhanced physical vapor deposition of a material onto workpiece, a metal target faces the workpiece across a target-to-workpiece gap less than a diameter of the workpiece. A carrier gas is introduced into the chamber and gas pressure in the chamber is maintained above a threshold pressure at which mean free path is less than 5% of the gap. RF plasma source power from a VHF generator is applied to the target to generate a capacitively coupled plasma at the target, the VHF generator having a frequency exceeding 30 MHz. The plasma is extended across the gap to the workpiece by providing through the workpiece a first VHF ground return path at the frequency of the VHF generator.
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Information query
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