Invention Grant
- Patent Title: Silicon wafer
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Application No.: US16096745Application Date: 2017-02-24
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Publication No.: US10648101B2Publication Date: 2020-05-12
- Inventor: Susumu Maeda , Hironori Banba , Haruo Sudo , Hideyuki Okamura , Koji Araki , Koji Sueoka , Kozo Nakamura
- Applicant: GLOBALWAFERS JAPAN CO., LTD.
- Applicant Address: JP Niigata
- Assignee: GLOBALWAFERS JAPAN CO., LTD.
- Current Assignee: GLOBALWAFERS JAPAN CO., LTD.
- Current Assignee Address: JP Niigata
- Agency: Wenderoth, Lind & Ponack, L.L.P.
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@e8a7280
- International Application: PCT/JP2017/007177 WO 20170224
- International Announcement: WO2017/187752 WO 20171102
- Main IPC: H01L21/32
- IPC: H01L21/32 ; H01L21/322 ; C30B29/06 ; C30B33/02 ; H01L21/324
Abstract:
A silicon wafer includes a denuded zone which is a surface layer and of which the density of vacancy-oxygen complexes which are complexes of vacancies and oxygen is less than 1.0×1012/cm3. An intermediate layer is disposed inwardly of the denuded zone so as to be adjacent to the denuded zone. The density of the vacancy-oxygen complexes in the intermediate layer increases gradually inwardly in the depth direction from the boundary with the denuded zone within a range of 1.0×1012/cm3 or over and less than 5.0×1012/cm3. The intermediate layer has a depth determined corresponding to the depth of the denuded zone. A bulk layer is disposed inwardly of the intermediate layer so as to be adjacent to the intermediate layer. The density of the vacancy-oxygen complexes in the bulk layer is 5.0×1012/cm3 or over.
Public/Granted literature
- US20190119828A1 SILICON WAFER Public/Granted day:2019-04-25
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