Invention Grant
- Patent Title: Cathode RF asymmetry detection probe for semiconductor RF plasma processing equipment
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Application No.: US15727421Application Date: 2017-10-06
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Publication No.: US10649006B2Publication Date: 2020-05-12
- Inventor: Maolin Long , Alex Paterson
- Applicant: Lam Research Corporation
- Applicant Address: US CA Fremont
- Assignee: Lam Research Corporation
- Current Assignee: Lam Research Corporation
- Current Assignee Address: US CA Fremont
- Agency: Weaver Austin Villeneuve & Sampson LLP
- Main IPC: G01R1/067
- IPC: G01R1/067 ; H01L21/683 ; H01J37/32
Abstract:
Apparatuses, systems, and techniques for characterizing asymmetry effects caused by cathode designs, ESC designs, cable routing, and process chamber geometries are provided. Such apparatuses, systems, and techniques may include, for example, a rotatable RF probe assembly in physical contact to a conductive plate disposed on a surface of a pedestal.
Public/Granted literature
- US20190107558A1 CATHODE RF ASYMMETRY DETECTION PROBE FOR SEMICONDUCTOR RF PLASMA PROCESSING EQUIPMENT Public/Granted day:2019-04-11
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