According to one embodiment, a magnetic memory device includes a magnetoresistive element including first and second magnetic layers, and a nonmagnetic layer between the first and the second magnetic layers and capable of setting one of a first state in which magnetization directions of the first and second magnetic layers are parallel and a second state in which magnetization directions of the first and second magnetic layers are antiparallel, and a write circuit that applies a first voltage to the element when setting one of the first and second states to the element and applies a second voltage in a same direction as the first voltage and greater than the first voltage to the element when setting the other one of the first and second states to the element.