Invention Grant
- Patent Title: Semiconductor element cleaning solution that suppresses damage to tungsten-containing materials, and method for cleaning semiconductor element using same
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Application No.: US15505654Application Date: 2015-10-02
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Publication No.: US10651028B2Publication Date: 2020-05-12
- Inventor: Toshiyuki Oie , Kenji Shimada
- Applicant: MITSUBISHI GAS CHEMICAL COMPANY, INC.
- Applicant Address: JP Chiyoda-ku
- Assignee: MITSUBISHI GAS CHEMICAL COMPANY, INC.
- Current Assignee: MITSUBISHI GAS CHEMICAL COMPANY, INC.
- Current Assignee Address: JP Chiyoda-ku
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@13eee83e
- International Application: PCT/JP2015/078075 WO 20151002
- International Announcement: WO2016/076031 WO 20160519
- Main IPC: H01L21/02
- IPC: H01L21/02 ; C11D7/04 ; C11D17/08 ; C11D7/12 ; C11D7/06 ; C11D7/32 ; H01L21/311 ; H01L21/304 ; C11D3/30 ; C11D3/43 ; C11D11/00 ; G03F7/42 ; C22C38/12
Abstract:
According to the present invention, it is possible to provide a cleaning solution which removes a photoresist on a surface of a semiconductor element having a low dielectric constant film (a low-k film) and a material that contains 10 atom % or more of tungsten, wherein the cleaning solution contains 0.001-5 mass % of an alkaline earth metal compound, 0.1-30 mass % of an inorganic alkali and/or an organic alkali, and water.
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