Invention Grant
- Patent Title: Method for producing an epitaxial layer on a growth plate
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Application No.: US16324399Application Date: 2017-07-25
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Publication No.: US10651032B2Publication Date: 2020-05-12
- Inventor: Hubert Moriceau , Matthew Charles , Christophe Morales
- Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
- Applicant Address: FR Paris
- Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
- Current Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
- Current Assignee Address: FR Paris
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@5ead8ca
- International Application: PCT/EP2017/068807 WO 20170725
- International Announcement: WO2018/028982 WO 20180215
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L21/20 ; H01L21/683
Abstract:
The present invention relates to the controlling of the deposition quality of an epitaxial layer, for example of gallium nitride, on a growth plate, for example of silicon, in particular at the level of the edges of the plate. The invention aims, in particular, to reduce the complexity and the production cost of known solutions. The production method according to the invention highlights the existence of a chamfer on each growth plate and provides a self-positioned deposition of a protective film on at least one part of the chamfer using a mechanical mask, preventing the deposition of the protective film on the useful zone Zu through epitaxy.
Public/Granted literature
- US20190206678A1 METHOD FOR PRODUCING AN EPITAXIAL LAYER ON A GROWTH PLATE Public/Granted day:2019-07-04
Information query
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