Invention Grant
- Patent Title: Semiconductor device and method for manufacturing same
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Application No.: US16093660Application Date: 2016-08-09
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Publication No.: US10651096B2Publication Date: 2020-05-12
- Inventor: Noriaki Tsuchiya , Yosuke Setoguchi
- Applicant: Mitsubishi Electric Corporation
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Studebaker & Brackett PC
- International Application: PCT/JP2016/073451 WO 20160809
- International Announcement: WO2018/029786 WO 20180215
- Main IPC: H01L21/66
- IPC: H01L21/66 ; H01L29/06 ; H01L29/16 ; H01L23/544 ; G01N21/95 ; G01N21/956 ; H01L29/78 ; H01L21/02 ; H01L21/027 ; H01L21/04 ; H01L29/04 ; H01L29/10 ; H01L29/167 ; H01L29/20 ; H01L29/36 ; H01L29/417 ; H01L29/45 ; H01L29/49 ; H01L29/66 ; H01L29/739
Abstract:
A method for manufacturing a semiconductor device according to the present invention includes a manufacturing step of forming a plurality of unit regions each having a plurality of first regions serving as effective cells in which main current flows, and a second region that has an appearance different from that of the first regions and serves as an ineffective cell in which no main current flows, and an appearance inspection step including a step of imaging the unit region to obtain a captured image, a step of cutting out an inspection image from the captured image based on a position of an alignment pattern containing the second region, and a step of comparing the inspection image with a reference image.
Public/Granted literature
- US20190172757A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME Public/Granted day:2019-06-06
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