Invention Grant
- Patent Title: Semiconductor device and method for fabricating the same
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Application No.: US16134286Application Date: 2018-09-18
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Publication No.: US10651107B2Publication Date: 2020-05-12
- Inventor: Hyung Seok Lee , Zin-Sig Kim , Sung-Bum Bae
- Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
- Applicant Address: KR Daejeon
- Assignee: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
- Current Assignee: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
- Current Assignee Address: KR Daejeon
- Agency: Rabin & Berdo, P.C.
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@1cfce5a0 com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@3b12683e
- Main IPC: H01L23/367
- IPC: H01L23/367 ; H01L25/065 ; H01L23/538 ; H01L23/00 ; H01L23/373 ; H01L29/20 ; H01L29/778

Abstract:
Provided are a semiconductor device and a method for fabricating the same. The semiconductor device includes a heat dissipation plate including a first region and a second region, a first element disposed on the heat dissipation plate in the first region, and a second element disposed on the heat dissipation plate in the second region. The first element includes a first substrate, the second element includes a second substrate, the first substrate includes a material different from a material of the second substrate, the first substrate contacts the heat dissipation plate, and the second element is bonded to the heat dissipation plate in a flip-chip bonding manner.
Public/Granted literature
- US20190096782A1 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME Public/Granted day:2019-03-28
Information query
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