Invention Grant
- Patent Title: Semiconductor apparatus, ignition device for internal combustion engine, and internal combustion engine system
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Application No.: US16082252Application Date: 2016-05-31
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Publication No.: US10651113B2Publication Date: 2020-05-12
- Inventor: Kazuhiro Nishimura , Atsunobu Kawamoto , Koji Yamamoto
- Applicant: Mitsubishi Electric Corporation
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Studebaker & Brackett PC
- International Application: PCT/JP2016/066026 WO 20160531
- International Announcement: WO2017/208343 WO 20171207
- Main IPC: H01L23/495
- IPC: H01L23/495 ; H01L23/48 ; H01L23/62 ; H01L23/00

Abstract:
An end of a high-voltage electrode (5) is connected to a high-voltage terminal of a semiconductor device (1). An end of a low-voltage electrode (6) is connected to a low-voltage terminal of the semiconductor device (1). A resin (15) seals the semiconductor device (1), the end of the high-voltage electrode (5), and the end of the low-voltage electrode (6). A first discharge electrode (16) is provided to a portion of the high-voltage electrode (5) not covered by the resin (15). A second discharge electrode (17) is provided to a portion of the low-voltage electrode (6) not covered by the resin (15). The first and second discharge electrodes (16,17) protrude to face each other.
Public/Granted literature
Information query
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