A method of manufacturing a semiconductor device includes forming a semiconductor substrate that has a conductive structure, and forming a precursor auxiliary layer stack on a first section of the conductive structure. The precursor auxiliary layer stack has a precursor adhesion layer and a precursor barrier layer between the precursor adhesion layer and the conductive structure. The precursor adhesion layer contains a second metal. The method further includes forming, on the precursor auxiliary layer stack, a metal structure containing a first metal and forming, from portions of the precursor auxiliary layer stack an adhesive layer containing the first and second metals.