Invention Grant
- Patent Title: 3D integration using Al—Ge eutectic bond interconnect
-
Application No.: US15663242Application Date: 2017-07-28
-
Publication No.: US10651151B2Publication Date: 2020-05-12
- Inventor: Peter Smeys , Mozafar Maghsoudnia
- Applicant: InvenSense, Inc.
- Applicant Address: US CA San Jose
- Assignee: InvenSense, Inc.
- Current Assignee: InvenSense, Inc.
- Current Assignee Address: US CA San Jose
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L25/065 ; H01L25/00 ; H01L23/00
Abstract:
A method includes aligning a germanium feature on a first CMOS wafer with an aluminum feature on a second CMOS wafer. The aluminum feature and the germanium feature are pressed together. A eutectic bond is formed connecting the aluminum feature to the germanium feature. The eutectic bond has a melting point which is lower than the melting point of aluminum and the melting point of germanium.
Public/Granted literature
- US20170330863A1 3D INTEGRATION USING Al-Ge EUTECTIC BOND INTERCONNECT Public/Granted day:2017-11-16
Information query
IPC分类:
