Invention Grant
- Patent Title: Semiconductor device
-
Application No.: US15909552Application Date: 2018-03-01
-
Publication No.: US10651161B2Publication Date: 2020-05-12
- Inventor: Masahiro Koyama , Kentaro Ikeda , Kazuto Takao
- Applicant: Kabushiki Kaisha Toshiba
- Applicant Address: JP Minato-ku
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Minato-ku
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@3e6e2def
- Main IPC: H01L25/11
- IPC: H01L25/11 ; H01L25/16 ; H01L23/00 ; H01L25/18

Abstract:
According to one embodiment, a semiconductor device includes a first transistor being normally-off, a second transistor being normally-on, and a first conductive member. The first transistor includes a first gate, a first source, a first drain, and a first semiconductor member. The first semiconductor member is provided between the first gate and the first drain and between the first source and the first drain. The second transistor includes a second gate, a second source, a second drain, and a second semiconductor member. An orientation from the first semiconductor member toward the first drain is the same as an orientation from the second semiconductor member toward the second gate, toward the second source, and toward the second drain. The first conductive member electrically connects the first drain and the second source.
Public/Granted literature
- US20190164943A1 SEMICONDUCTOR DEVICE Public/Granted day:2019-05-30
Information query
IPC分类: