Invention Grant
- Patent Title: Power FET with a resonant transistor gate
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Application No.: US15881164Application Date: 2018-01-26
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Publication No.: US10651167B2Publication Date: 2020-05-12
- Inventor: L. Pierre de Rochemont
- Applicant: L. Pierre de Rochemont
- Agency: Burns & Levinson LLP
- Agent Jerry Cohen
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L27/06 ; H01L23/64 ; H01L25/16 ; H01L49/02 ; H01L29/423 ; H01L29/43 ; H01L29/739 ; H01L29/78 ; G06F1/3203 ; H01L23/522 ; H01L23/528 ; H01L23/66 ; H01L29/06
Abstract:
A semiconductor FET provides a resonant gate and source and drain electrodes, wherein the resonant gate is electromagnetically resonant at one or more predetermined frequencies.
Public/Granted literature
- US20190035781A1 POWER FET WITH A RESONANT TRANSISTOR GATE Public/Granted day:2019-01-31
Information query
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