Invention Grant
- Patent Title: Method for forming a pattern and method for fabricating a semiconductor device using the same
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Application No.: US16214369Application Date: 2018-12-10
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Publication No.: US10651176B2Publication Date: 2020-05-12
- Inventor: Jae-Houb Chun
- Applicant: SK hynix Inc.
- Applicant Address: KR Gyeonggi-do
- Assignee: SK hynix Inc.
- Current Assignee: SK hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@35277cee
- Main IPC: H01L27/108
- IPC: H01L27/108 ; H01L21/033 ; H01L21/3213 ; H01L21/768

Abstract:
A method for forming a pattern includes: forming a preliminary pattern having a plate portion and a plurality of pad portions that protrude from an end of the plate portion over a substrate; forming a first hard mask pattern that includes a blocking portion covering the pad portions and a plurality of line portions partially covering the plate portion; forming a spacer on a sidewall of each of the line portions; forming a second hard mask pattern that fills a space between the line portions by contacting the spacer; forming an opening that exposes the plate portion between the first hard mask pattern and the second hard mask pattern by removing the spacer; and forming a plurality of line pattern portions that are respectively coupled to the pad portions by etching an exposed portion of the plate portion through the opening.
Public/Granted literature
- US20190304983A1 METHOD FOR FORMING A PATTERN AND METHOD FOR FABRICATING A SEMICONDUCTOR DEVICE USING THE SAME Public/Granted day:2019-10-03
Information query
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