Invention Grant
- Patent Title: Semiconductor device and method of forming the same
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Application No.: US16183374Application Date: 2018-11-07
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Publication No.: US10651177B1Publication Date: 2020-05-12
- Inventor: Chung-Lin Huang
- Applicant: NANYA TECHNOLOGY CORPORATION
- Applicant Address: TW New Taipei
- Assignee: NANYA TECHNOLOGY CORPORATION
- Current Assignee: NANYA TECHNOLOGY CORPORATION
- Current Assignee Address: TW New Taipei
- Agency: Muncy, Geissler, Olds & Lowe, P.C.
- Main IPC: H01L27/108
- IPC: H01L27/108 ; H01L23/528 ; H01L21/768 ; H01L23/535
Abstract:
The present disclosure provides a semiconductor device. The semiconductor device includes a semiconductor substrate, a semiconductor layer, and a contact. The semiconductor layer is over the semiconductor substrate. The contact has an interface with the semiconductor layer. The contact is substantially tapered toward the semiconductor substrate to the interface.
Information query
IPC分类:
