A method for producing a pillar-shaped semiconductor device includes steps of forming, on the side surface of an N+ layer (38b) of the top portion of a Si pillar (6b) and the side surface of the top portion of a W layer (43a), ring-shaped SiO2 layers and an AlO layer (51) in outer peripheral portions surrounding the ring-shaped SiO2 layers; etching the ring-shaped SiO2 layers through the AlO layer serving as a mask, to form ring-shaped contact holes; and filling the contact holes with W layers (52a, 52b), to form ring-shaped W layers (52a, 52d) being in contact with the side surface of the N+ layer (38b) and the side surface of the top portion of the W layer (43a), and having constant widths in plan view.