Invention Grant
- Patent Title: Semiconductor device and method of manufacturing the same
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Application No.: US15694737Application Date: 2017-09-01
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Publication No.: US10651185B2Publication Date: 2020-05-12
- Inventor: Akio Kaneko
- Applicant: TOSHIBA MEMORY CORPORATION
- Applicant Address: JP Tokyo
- Assignee: TOSHIBA MEMORY CORPORATION
- Current Assignee: TOSHIBA MEMORY CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Foley & Lardner LLP
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@43700e53
- Main IPC: H01L27/11556
- IPC: H01L27/11556 ; H01L27/11582 ; H01L29/10 ; H01L21/768 ; H01L23/522 ; H01L23/528 ; H01L23/532 ; H01L27/11524 ; H01L27/1157 ; H01L29/49
Abstract:
A semiconductor device includes a first electrode layer and a second electrode layer formed thereon to be spaced from the first electrode layer, a columnar portion penetrating the first and second electrode layers in a first direction and including a semiconductor layer, a first insulating film between the first and second electrode layers and the semiconductor layer and in contact with the first electrode layer, a charge storage layer between the second electrode layer and the first insulating film, and an insulating film between the second electrode layer and the charge storage layer. The semiconductor layer includes a first portion facing the second electrode layer in a second direction intersecting with the first direction and a second portion in contact with the first portion in the first direction. A concentration of a impurity contained in the second portion is higher than that of the impurity contained in the first portion.
Public/Granted literature
- US20180277554A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2018-09-27
Information query
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