A semiconductor memory device includes a substrate, a first electrode, a second electrode, a signal line, a first charge storage film and a second charge storage film. The first and second electrodes extend in a first direction parallel to the substrate. The first electrode has first and second surfaces. The second electrode has third and fourth surfaces. The spacing between the second and fourth surfaces is larger than the spacing between the first and third surfaces. The signal line is provided between the second surface and the fourth surface and extends in a second direction perpendicular to the substrate. The first charge storage film is provided between the signal line and the second surface. The second charge storage film is provided between the signal line and the fourth surface. In a cross section parallel to the substrate, the signal line has a contour having different curvatures.