Invention Grant
- Patent Title: 3D semiconductor devices including a supporter and methods of forming the same
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Application No.: US16192232Application Date: 2018-11-15
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Publication No.: US10651197B2Publication Date: 2020-05-12
- Inventor: Sang Jun Hong , Ee Jou Kim , Joong Shik Shin
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Myers Bigel, P.A.
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@6dc2bf04
- Main IPC: H01L27/11582
- IPC: H01L27/11582 ; H01L27/11565 ; H01L21/768 ; H01L29/792 ; H01L27/11573 ; H01L27/11551 ; H01L27/11524 ; H01L27/11529
Abstract:
A semiconductor device comprises a lower conductive layer on a substrate. A conductive line is on the lower conductive layer. A buried trench in the conductive line is provided. A supporter which is on the conductive line and extends in the buried trench is provided. A stack structure including a plurality of insulating layers and a plurality of conductive layers that are alternately stacked is on the supporter. A channel structure passing through the stack structure, the supporter, and the conductive line is provided. An isolation trench passing through the stack structure, the supporter, and the conductive line is provided.
Public/Granted literature
- US20190355740A1 3D SEMICONDUCTOR DEVICES INCLUDING A SUPPORTER AND METHODS OF FORMING THE SAME Public/Granted day:2019-11-21
Information query
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