Invention Grant
- Patent Title: Band-pass filter for stacked sensor
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Application No.: US16163908Application Date: 2018-10-18
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Publication No.: US10651225B2Publication Date: 2020-05-12
- Inventor: Cheng Yu Huang , Chun-Hao Chuang , Chien-Hsien Tseng , Kazuaki Hashimoto , Keng-Yu Chou , Wei-Chieh Chiang , Wen-Hau Wu
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Eschweiler & Potashnik, LLC
- Main IPC: H01L27/146
- IPC: H01L27/146 ; H01L23/552 ; H01L25/04 ; H01L23/64

Abstract:
In some embodiments, the present disclosure relates to a three-dimensional integrated chip. The three-dimensional integrated chip includes a first integrated chip (IC) die and a second IC die. The first IC die has a first image sensor element configured to generate electrical signals from electromagnetic radiation within a first range of wavelengths. The second IC die has a second image sensor element configured to generate electrical signals from electromagnetic radiation within a second range of wavelengths that is different than the first range of wavelengths. A first band-pass filter is arranged between the first IC die and the second IC die and is configured to reflect electromagnetic radiation that is within the first range of wavelengths.
Information query
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