Invention Grant
- Patent Title: Vertically integrated active matrix backplane
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Application No.: US14226285Application Date: 2014-03-26
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Publication No.: US10651252B2Publication Date: 2020-05-12
- Inventor: Stephen M. Gates , Bahman Hekmatshoartabari , Ghavam G. Shahidi , Davood Shahrjerdi
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Applicant Address: US NY Armonk
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee Address: US NY Armonk
- Agency: Tutunjian & Bitetto, P.C.
- Agent Erik Johnson
- Main IPC: H01L27/32
- IPC: H01L27/32 ; H01L29/66 ; H01L27/12 ; H01L29/423 ; H01L29/73 ; H01L29/737 ; H01L29/735
Abstract:
A method of forming an active matrix pixel that includes forming a driver device including contact regions deposited using a low temperature deposition process on a first portion of an insulating substrate. An electrode of an organic light emitting diode is formed on a second portion of the insulating substrate. The electrode is in electrical communication to receive an output from the driver device. At least one passivation layer is formed over the driver device. A switching device comprising at least one amorphous semiconductor layer is formed on the at least one passivation layer over the driver device.
Public/Granted literature
- US20150279913A1 VERTICALLY INTEGRATED ACTIVE MATRIX BACKPLANE Public/Granted day:2015-10-01
Information query
IPC分类:
