Invention Grant
- Patent Title: Efficient metal-insulator-metal capacitor
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Application No.: US16052161Application Date: 2018-08-01
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Publication No.: US10651266B2Publication Date: 2020-05-12
- Inventor: Kisup Chung , Isabel C. Estrada-Raygoza , Hemanth Jagannathan , Chi-Chun Liu , Yann A. M. Mignot , Hao Tang
- Applicant: TESSERA, INC.
- Applicant Address: US CA San Jose
- Assignee: Tessera, Inc.
- Current Assignee: Tessera, Inc.
- Current Assignee Address: US CA San Jose
- Main IPC: H01L49/02
- IPC: H01L49/02

Abstract:
Capacitors include a stack that has a first metallic layer formed over a substrate with at least one high domain and at least one low domain, an insulator formed over the first metallic layer, and a second metallic layer formed over the insulator. A bottom contact is formed in the substrate having a top surface that is even with a top surface of the substrate in the at least one high domain. A cap layer is formed directly on the substrate in the high domains, under the stack.
Public/Granted literature
- US20180350896A1 EFFICIENT METAL-INSULATOR-METAL CAPACITOR Public/Granted day:2018-12-06
Information query
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