Invention Grant
- Patent Title: Production method of capacitor structure, capacitor structure, and sensor
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Application No.: US16387463Application Date: 2019-04-17
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Publication No.: US10651267B2Publication Date: 2020-05-12
- Inventor: Youting Zhang , Weijie Ma , Ming Zhang , Shichao Fei , Haifeng Hu , Jun Chen
- Applicant: Hefei Xinsheng Optoelectronics Technology Co., Ltd. , BOE TECHNOLOGY GROUP CO., LTD.
- Applicant Address: CN Hefei CN Beijing
- Assignee: HEFEI XINSHENG OPTOELECTRONICS TECHNOLOGY CO., LTD.,BOE TECHNOLOGY GROUP CO., LTD.
- Current Assignee: HEFEI XINSHENG OPTOELECTRONICS TECHNOLOGY CO., LTD.,BOE TECHNOLOGY GROUP CO., LTD.
- Current Assignee Address: CN Hefei CN Beijing
- Agency: Kinney & Lange, P.A.
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@6d0333c7
- Main IPC: H01L21/321
- IPC: H01L21/321 ; H01L49/02 ; H01G4/005 ; H01G5/16 ; H01L21/3213 ; G01P15/125 ; G01L1/14 ; C23C16/04

Abstract:
There is provided a production method of a capacitor structure, having the following steps: forming a bottom electrode on a substrate; forming a sacrificial layer, which covers at least one part of the bottom electrode, on the substrate; forming a top electrode, which traverses the bottom electrode and covers at least one part of the sacrificial layer, on the substrate, such that a sacrificial layer is present at a part where an orthographic projection of the top electrode on the substrate and an orthographic projection of the bottom electrode on the substrate overlap; removing the sacrificial layer with a sacrificial layer removing solution to form an air gap. There are also provided a capacitor structure and a sensor.
Public/Granted literature
- US20200098852A1 PRODUCTION METHOD OF CAPACITOR STRUCTURE, CAPACITOR STRUCTURE, AND SENSOR Public/Granted day:2020-03-26
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