Invention Grant
- Patent Title: Metal-oxide-metal capacitor with improved alignment and reduced capacitance variance
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Application No.: US16009976Application Date: 2018-06-15
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Publication No.: US10651268B2Publication Date: 2020-05-12
- Inventor: Haitao Cheng , Ye Lu , Chao Song
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agency: Qualcomm Incorporated/Seyfarth
- Main IPC: H01L29/00
- IPC: H01L29/00 ; H01L49/02

Abstract:
A capacitor has reduced misalignment in the interconnect layers and lower capacitance variance. The capacitor includes a first endcap having a first section and a second section orthogonal to the first section. The capacitor includes a first set of conductive fingers orthogonally coupled to the first section. The capacitor includes a third set of conductive fingers orthogonally coupled to the second section of the endcap and a second endcap parallel to the first section of the endcap. The capacitor includes a second set of conductive fingers orthogonally coupled to a second endcap and interdigitated with the first set of conductive fingers at a first interconnect layer. The capacitor includes a third endcap parallel to the second section of the first endcap and a fourth set of conductive fingers orthogonally coupled to the third endcap and interdigitated with the third set of conductive fingers at the first interconnect layer.
Public/Granted literature
- US20190386092A1 METAL-OXIDE-METAL CAPACITOR WITH IMPROVED ALIGNMENT AND REDUCED CAPACITANCE VARIANCE Public/Granted day:2019-12-19
Information query
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