Invention Grant
- Patent Title: Method for forming source/drain contacts
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Application No.: US16211451Application Date: 2018-12-06
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Publication No.: US10651287B2Publication Date: 2020-05-12
- Inventor: Shahaji B. More , Chun Hsiung Tsai , Shih-Chieh Chang , Kuo-Feng Yu , Cheng-Yi Peng
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Haynes and Boone, LLP
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L29/66 ; H01L21/265 ; H01L29/167 ; H01L21/324 ; H01L29/165 ; H01L29/45 ; H01L21/311 ; H01L21/768 ; H01L21/8234 ; H01L29/08 ; H01L21/285 ; H01L29/417 ; H01L29/78 ; H01L21/3105 ; H01L29/161
Abstract:
A semiconductor structure includes a substrate, a semiconductor fin connected to the substrate, an epitaxial layer disposed over the semiconductor fin, and a silicide feature over and in contact with the epitaxial layer. The epitaxial layer including silicon germanium (SiGe) and further includes gallium (Ga) in an upper portion of the epitaxial layer that is in contact with the silicide feature.
Public/Granted literature
- US20190165124A1 Method for Forming Source/Drain Contacts Public/Granted day:2019-05-30
Information query
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