Invention Grant
- Patent Title: High-voltage lateral GaN-on-silicon Schottky diode
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Application No.: US15223455Application Date: 2016-07-29
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Publication No.: US10651317B2Publication Date: 2020-05-12
- Inventor: Anthony Kaleta , Douglas Carlson , Timothy E. Boles
- Applicant: MACOM Technology Solutions Holdings, Inc.
- Applicant Address: US MA Lowell
- Assignee: MACOM Technology Solutions Holdings, Inc.
- Current Assignee: MACOM Technology Solutions Holdings, Inc.
- Current Assignee Address: US MA Lowell
- Agency: Wolf, Greenfield & Sacks, P.C.
- Main IPC: H01L23/58
- IPC: H01L23/58 ; H01L29/872 ; H01L29/66 ; H01L29/40 ; H01L29/778 ; H01L29/861 ; H01L29/06 ; H01L29/20 ; H01L21/761 ; H01L29/205 ; H02M7/00
Abstract:
High-voltage, gallium-nitride Schottky diodes are described that are capable of withstanding reverse-bias voltages of up to and in excess of 2000 V with reverse current leakage as low as 0.4 microamp/millimeter. A Schottky diode may comprise a lateral geometry having an anode located between two cathodes, where the anode-to-cathode spacing can be less than about 20 microns. A diode may include at least one field plate connected to the anode that extends above and beyond the anode towards the cathodes.
Public/Granted literature
- US20170301798A1 HIGH-VOLTAGE LATERAL GAN-ON-SILICON SCHOTTKY DIODE Public/Granted day:2017-10-19
Information query
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