Invention Grant
- Patent Title: SPAD photodiode
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Application No.: US16325369Application Date: 2017-09-11
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Publication No.: US10651332B2Publication Date: 2020-05-12
- Inventor: Norbert Moussy
- Applicant: Commissariat à l'Énergie Atomique et aux Énergies Alternatives
- Applicant Address: FR Paris
- Assignee: Commissariat à l'Énergie Atomique et aux Énergies Alternatives
- Current Assignee: Commissariat à l'Énergie Atomique et aux Énergies Alternatives
- Current Assignee Address: FR Paris
- Agency: Wolf, Greenfield & Sacks, P.C.
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@7f9115ff
- International Application: PCT/FR2017/052406 WO 20170911
- International Announcement: WO2015/050996 WO 20180322
- Main IPC: H01L31/107
- IPC: H01L31/107 ; H01L31/0368 ; H01L31/0352 ; H01L31/0224
Abstract:
A SPAD-type photodiode including: a semiconductor substrate of a first conductive type having a front side and a back side; and a first semiconductor region of the second conductivity type extending in the substrate from the front side thereof and towards the back side thereof, the lateral surfaces of the first region being in contact with the substrate and the junction between the lateral surfaces of the first region and the substrate defining an avalanche area of the photodiode.
Public/Granted literature
- US20190198701A1 SPAD PHOTODIODE Public/Granted day:2019-06-27
Information query
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